Product Code:1236048
Published Date: Oct 31,2024
Pages: 99
Region: Global
Category: Electronics & Semiconductor
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GaN, or Gallium Nitride, is a semiconductor material that maximizes power density. By using GaN devices in a radio frequency (RF) amplifier, high-output power can be achieved without increasing size and weight. This is ideal for applications requiring maximum RF power density, such as active antenna arrays. The global GaN HEMT Foundries market size is projected to grow from US$ million in 2024 to US$ million in 2030; it is expected to grow at a CAGR of %from 2024 to 2030. LPI (LP Information)' newest research report, the “GaN HEMT Foundries Industry Forecast” looks at past sales and reviews total world GaN HEMT Foundries sales in 2022, providing a comprehensive analysis by region and market sector of projected GaN HEMT Foundries sales for 2023 through 2029. With GaN HEMT Foundries sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN HEMT Foundries industry. This Insight Report provides a comprehensive analysis of the global GaN HEMT Foundries landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyses the strategies of leading global companies with a focus on GaN HEMT Foundries portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global GaN HEMT Foundries market. This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN HEMT Foundries and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN HEMT Foundries. United States market for GaN HEMT Foundries is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030. China market for GaN HEMT Foundries is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030. Europe market for GaN HEMT Foundries is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030. Global key GaN HEMT Foundries players cover MACOM, Sanan IC, Global Communication Semiconductors, SK keyfoundry, Cree, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2023. This report presents a comprehensive overview, market shares, and growth opportunities of GaN HEMT Foundries market by product type, application, key players and key regions and countries. Segmentation by Type: E-type D-type Segmentation by Application: LV GaN HEMT HV GaN HEMT This report also splits the market by region: Americas United States Canada Mexico Brazil APAC China Japan Korea Southeast Asia India Australia Europe Germany France UK Italy Russia Middle East & Africa Egypt South Africa Israel Turkey GCC Countries Segmentation by Type: E-type D-type Segmentation by Application: LV GaN HEMT HV GaN HEMT This report also splits the market by region: Americas United States Canada Mexico Brazil APAC China Japan Korea Southeast Asia India Australia Europe Germany France UK Italy Russia Middle East & Africa Egypt South Africa Israel Turkey GCC Countries The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration. MACOM Sanan IC Global Communication Semiconductors SK keyfoundry Cree Wavice BAE Systems